Infrared-sensitive InGaAs-on-Si p-i-n photodetectors exhibiting high-power linearity

We report on the device fabrication and measured performance of p-i-n photodiodes made from wafer-bonded InGaAs-on-Si material. Dark currents below 38 pA and 3-dB bandwidths above 11 GHz were measured for a -4-V bias and for an active area diameter of 20 μm. The thermal conductivity of silicon enables a 200-MHz 1-dB compression current of 76.5 mA, measured on nonoptimized test devices. These devices dissipate upwards of 612 mW of electrical power. High-yield wafer-scale fabrication of InGaAs-on-Si p-i-n photodetectors is demonstrated.