Narrow-band band-pass filters on silicon substrates at 30 GHz

Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at /spl sim/30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters on Si show small 3.2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the nonimplanted filters failed due to the high substrate loss.