Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs

Built-in drift fields are employed to enhance the performance of GaAs-based heterojunction bipolar transistors (HBTs) with reduced turn-on voltage. Specifically, we explore in detail the dc and RF device property improvements enabled by using compositionally graded GaInAsN base layers. Experimental results are compared to predictions of the standard drift-diffusion base transport model employing a finite exit velocity. In large area devices, graded base samples with built-in fields of /spl sim/7 kV/cm (i.e. 40 meV over 500 /spl Aring/) typically have a dc current gain 1.8/spl times/ larger than constant base composition samples. In small area devices, the peak cut-off frequency is typically 10%-15% higher than constant composition samples. These results are shown to agree reasonably well with predictions, thereby demonstrating that analytical drift-diffusion based models can be extended to HBTs with GaInAsN base layers.