InGaP/GaAs HBT MMICs for 5-GHz-band wireless applications - a high P1 dB, 23/4-dB step-gain low-noise amplifier and a power amplifier

This paper describes the circuit design and measurement results of two InGaP/GaAs HBT MMICs, a low-noise amplifier (LNA) and a power amplifier (PA), for 5-GHz-band wireless LAN applications. The LNA including all on-chip matching and bias feed circuits delivers a high P1 dB of 13.5 dBm, a 23/4-dB step gain switching, and 2.4/3.6-dB low noise figure while keeping a low current consumption of 9.2 mA at 3 V. The PA featuring on-chip input and output matching exhibits 23.2 dBm of P1 dB and 23.2 dB of power gain with 30% PAE from 3.0-V power supply.