5V-only, standard 0.5/spl mu/m CMOS programmable and adaptive floating-gate circuits and arrays using CMOS charge pumps

This work presents the integration of high voltage charge pumps into floating-gate arrays in a standard 0.5/spl mu/m CMOS n-well double poly process. In this research two different Dickson charge pumps are presented for the tunnelling and injection in floating-gate circuits and arrays. A six stage design implemented with Schottky rectifiers is used to modulate tunneling and a three stage high voltage design is used to modulate injection. The Schottky configuration is able to boost the output voltage to approximately 18V while sourcing 1/spl mu/A and the high voltage configuration is able to boost the output voltage to approximately 7V while sourcing 0.1/spl mu/A. In both cases no voltage skipping is observed in the output voltage. Experimental results and analysis of each configuration are presented.