Design of a 1.8 V 4.9 /spl sim/ 5.9 GHz CMOS broadband low noise amplifier with 0.28 dB gain flatness using AMER inductor loads

A 4.9 /spl sim/ 5.9 GHz broadband LNA, suitable for IEEE 802.11a, HIPERLAN and IEEE 802.11j, is designed and simulated. Using active magnetic energy recovery (AMER) inductors to boost gain, this broadband AMER LNA exhibits high gain (21.2 dB) with good gain flatness (0.28 dB) within the 4.9 /spl sim/ 5.9 GHz frequency range. In comparison to the conventional 3-stage LNA, this broadband AMER LNA achieve higher gain, and better gain flatness with the cost of consuming slightly extra current, 0.2 mA, in two AMER inductors. The simulated noise figure lies within 2.2 dB and 2.7 dB in the frequency range and the IIP3 is +8 dBm. The broadband AMER LNA is designed to meet the requirements for integration of all IEEE 802.11a, HIPERLAN and IEEE 802.11j.