Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.