Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure

In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage.