Low-voltage high-speed travelling wave InGaAsP-InP phase modulator

A high-speed low-drive-voltage travelling wave electrodes InGaAsP-InP phase modulator operated at 1.55 μm is demonstrated. The modulator is fabricated using a multiple quantum-well optical waveguide with an on chip integrated termination resistor. A small signal bandwidth of 35 GHz and a V/spl pi/ of 1.8 V has been demonstrated.