NBTI effects of pMOSFETs with different nitrogen dose implantation

NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I/sub CP/ were measured simultaneously. Reduction of /spl Delta/V/sub TH/ and I/sub CP/ after positive gate bias stressing is related with the recovery of interface states.