Optical and laser properties of epitaxially grown passively Q-switched Cr/sup 4+/:GGG/ Nd/sup 3+/:GGG, Cr/sup 4+/:YAG/ Yb/sup 3+/:YAG and Cr/sup 4+/:YAG/ Nd/sup 3+/ :YAG microchip lasers

Liquid phase epitaxy technique is used to grow Cr/sup 4+/ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) are reported.