Fabrication of Nd:KGd(WO/sub 4/)/sub 2/ thin film on Si substrate by introducing CeO/sub 2/ buffer layer

In this paper we will describe pulsed laser deposition of Nd:KGW films on Si substrate by introducing (100 or 111) CeO/sub 2/ buffer layer. The KrF excimer laser (/spl lambda/=248 nm, /spl tau/=27 ns, v=20 Hz) is used for ablation. The Rutherford backscattering (RBS), X-ray diffraction (XRD) analyses, PL measurements, and waveguide propagation have been performed. The annealing at 900/spl deg/C of the films has also been accomplished.