Determination of the band diagram of the semiconductor laser structure by optical modulation spectroscopy methods

This paper presents the use of photoreflectance, configuration of electroreflectance and below-bandgap-excitation photoreflectance for determination of the band diagram of the semiconductor laser AlGaAs/GaAs heterostructure with strained InGaAs quantum well grown on n-GaAs substrate. The structure was illuminated by low-intensity probe light with quantum energy and was exposed to external influence with modulation frequency f=330Hz.