DLTS study of silicon-on-insulator structures irradiated with electrons or high-energy ions

Results of deep-level transient spectroscopy (DLTS) study of radiation defects in silicon layers, Si/SiO/sub 2/ interface traps, and a charge in buried oxide formed under irradiation with 2.0 MeV electrons (10/sup 5/-10/sup 6/ rad.) or 245 MeV Kr (2.2/spl times/10/sup 8/ cm/sup -2/ and 1.4/spl times/10/sup 9/ cm/sup -2/) ions in silicon-on-insulator (SOI) structures are presented and discussed. SOI was fabricated by the wafer bonding and hydrogen cutting. It was found that electron irradiation leads to transformation of energy spectrum of the interface traps (relaxation of the bonded interface) in SOI. The main effect of high-energy Kr ion irradiation consists in formation of radiation defects in the top silicon layer as well as in the substrate. The fixed positive charge is introduced in the buried oxide under irradiation in both cases.