Performances of Si nanocrystal memories obtained by by CVD and their potentialities to further scaling of non-volatile memories

We have fabricated nanocrystal memories both single cells and arrays by using low pressure chemical vapor deposition of silicon nanocrystals. The potentialities of nanocrystal memories are discussed both in terms of nanocrystal deposition and control dielectrics optimization. Excellent performances are achieved, showing that this technology shows potentialities for non volatile memory cell scaling. In addition we discuss the impact of the fluctuations in nanocrystals distribution on the scaling possibilities of these memories.