Semidistributed model of millimeter-wave FET for parameter and noise figure predictions

An electrical FET model, derived from a partition of the actual transistor along its gate width into N identical sections, is presented. This sliced model has two important advantages compared to distributed models: first, the derivation of its element values is obtained by directly applying Kirchhoff's laws, and second, inserting the noise sources is easy and makes possible the prediction of the FET noise parameters. An example that shows good agreement between minimum noise figures derived from the sliced model and from the Fukui formula in the range 18-40 GHz is given.<
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