Recent development of nitride semiconductor electronic devices for next generation wireless communications

This paper reviews potential and present status of AlGaN/GaN HFETs. High potential of these devices for high-power and high-frequency operation are explained from the physical properties of GaN and AlGaN/GaN hetero-structures. Present status of theses device performances are briefly introduced. Over 150 W operation at 2 GHz and 3.2 W operation at 30 GHz has been already achieved so far, verifying high-potential of this :material system. Issues for further improvements of these device performances as well as issues for production level technology are discussed.