SiGe HMODFET "KAIST" micropower model and amplifier realization

The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a simple micropower amplifier (sub 300-/spl mu/W total power consumption), realized in SiGe technology, and a comparison of modeled versus measured data is included.