Theoretical investigation of photo heterojunction bipolar cathode transferred electron device for high-speed data optical-millimeter-wave self-up-converter

The potential of InP-InGaAs-InP n/sup +/ p/sup +/ nn/sup +/ photoheterojunction bipolar cathode transferred electron device (PHeBiCTED) is investigated by means of a general time domain circuit simulator associated with a full two-dimensional hydrodynamic physical modeling of the semiconductor device. The PHeBiCTED capabilities as a 160-GHz millimeter-wave (mm-wave) generator were investigated first. Then, the theoretical feasibility of a PHeBiCTED-based optical-mm-wave self-up-converter is demonstrated.