Effects of shielded-gate structure on on-resistance of the SIT with a high-purity channel region

A shielded-gate structure, is proposed to improve the on-resistance of the static induction transistor (SIT) with a high-purity channel. The results of two-dimensional simulation reveal that the introduction of this structure can reduce the on-resistance of the high-purity channel SIT as well as support sufficient depletion in the channel at a small reverse gate voltage to ensure the static induction operation.<
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