Effects of arsenic n/sup +/ contact implants on memory switching in vertical polycrystalline silicon resistors

The effects of arsenic implants, which form the lower and the upper n/sup +/ contact regions of the vertical polycrystalline silicon resistor, on memory switching have been investigated. It is shown that switching in devices without the lower n/sup +/ contact is initiated due to Joule heating, whereas in devices without the upper n/sup +/ contact, it is electronic in nature. These resistors are suitable for applications in high density 'fuse-programmable' memory technology.<
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