High-performance undoped InP/n-In/sub 0.53/Ga/sub 0.47/As MSM photodetectors grown by LP-MOVPE

A new high-performance undoped In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetector (MSM-PD) with an undoped InP barrier-enhancement layer is reported. The layers were grown by the low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) technique. The main features of this device include: a very low dark current of less than 60 nA, (100*100) mu m/sup 2/, at 1.5 V; a short risetime of 30 ps at 6 V; and a high responsivity of 0.42 A/W for lambda =1.3 mu m.<
>