Electromigration of Sn-9Zn solder in contact with Cu

Pb-free solder has become an important issue in electronic industry. Sn-9Zn solder with a relatively low eutectic temperature of 198/spl deg/C has attracted attentions as an alternative for Sn-37Pb solder. Recent studies have pointed out the importance of electromigration in advanced packaging solder joint like flip chip bonding. This present study investigated the electromigration behavior between Cu and Sn-9Zn solder under a current density of 650 A/cm/sup 2/ for up to 216 hours. The thickness of the solder specimen was 100 /spl mu/m while that of the Cu plating was 20 /spl mu/m. The surface of the Cu plating on both sides of the solder specimen was further protected with an Au layer deposited with sputtering deposition. The experimental results indicated that Cu-Zn intermetallic compound was formed at the interface between Cu and cathodic side of the Sn9Zn solder, and within the bulk solder near the interface. This compound was identified to be Cu5Zn8 with EDS. These compounds were found to exist as far as 60 /spl mu/m away from the interface. Consumption of Cu was also observed for the Cu plating on the cathodic side. Similar occurrences were observed on the anodic side but with less extent of compound formation and Cu consumption.