Nonvolatile random-access memories in silicon carbide

This paper presents the advantages of SiC with electronically passivated SiC-SiO/sub 2/ interface for developing the next generation of semiconductor memories. Experimental results on charge-retention times are presented to demonstrate that the Si DRAMs would become nonvolatile memories if implemented into SiC. The disadvantages of the DRAM cell (1C1T), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.