Spatial selectivity of impurity free vacancy disordering using different dielectric layers for photonic/optoelectronic integrated circuits

This paper reviews the methods of suppressing interdiffusion during impurity free disordering (IFVD) process by using Ga-doped spin-on glass film, SiO/sub 2//Ga/sub x/O/sub y/ bi-layer and TiO/sub 2//Ga/sub x/O/sub y/ bi-layer. The mechanism of interdiffusion suppression based on controlling of group III vacancy generation and diffusion was introduced and results were compared for both quantum well and quantum dot structures. This is crucial for realization of spatial selectivity of IFVD for photonic/optoelectronic integrated circuits.