SEE sensitivity trends in non-hardened high density SRAMs with sub-micron feature sizes

We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradiation by protons and heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared with previously measured sensitivities for similar devices with larger features. We discuss the sensitivity trends with temperature and examine other effects such as stuck bits.