Contact hole fill with low temperature LPCVD TiN

Low-temperature (575 degrees C), low-pressure chemical vapor deposition (LPCVD) of thick (250-800-nm) TiN films was investigated. Submicron contact holes could be filled completely with TiN. The influence of the LPCVD chemistry on the materials properties and conformality of the deposit was addressed. The compatibility of LPCVD TiN contact filling with a TiSi/sub 2/ salicide process was demonstrated with electrical measurements of junction leakage and contact resistance.<
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