Step coverage study of PETEOS deposition for intermetal dielectric applications

A simple one-step plasma-enhanced chemical vapor deposition of TEOS (PETEOS) deposition process for submicron multilevel metallization has been developed. The effect of deposition conditions on PETEOS step coverage and deposition profile is investigated. Two new processes are demonstrated which meet the step coverage requirements for 0.6- mu m technology. The first process produces a directional deposition profile using relatively low pressure and high TEOS to oxygen flow. The second process utilizes the addition of NF/sub 3/ to achieve a favorable dielectric profile.<
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