A BiCMOS SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO

In this paper, we present a 10/30GHz tripler and an X band VCO, integrated on a single chip, using a 0.35/spl mu/m, 60GHz-F/sub MAX/ BiCMOS SiGe technology. These two circuits are used together in order to implement a low phase noise MMIC 30GHz source. The tripler exhibits a conversion gain in the -5dB range. The VCO exhibits a phase noise of -87dBc/Hz at a 100kHz frequency offset. The supply voltage of the chip is 7 volts and the total DC power consumption is in the range of 900mW. The circuit exhibits a surface area less than 1mm/sup 2/ (probe pads area excluded).