Spatial integration of direct band-to-band tunneling currents in general device structures

A simplified integration technique for direct band-to-band tunneling current calculation in semiconductor devices of 1- or 2-D general device structures is described. The integration, along part of the depletion region, is of a tunneling generation function which depends on the local electric field. The simplified integration scheme relies on Kane's parabolic shaped gap barrier which accurately applies to such narrow-bandgap semiconductors as InSb and Hg/sub 1-x/Cd/sub x/Te. Tunneling current and zero bias resistance calculations in 1-D Hg/sub 1-x/Cd/sub x/Te p-n junctions using the proposed technique are presented. The extension of the technique to 2-D potential structures is demonstrated by modeling peripheral surface tunneling currents. The results compare well with measured reverse breakdown currents of InSb gate-controlled diodes.<
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