SPICE modeling of double diffused vertical power MOSFETs exposed to gamma radiation

A SPICE device model for vertical power MOSFETs has been developed for simulating the degradation effects caused by gamma radiation on electrical performance. The total dose radiation effects and dynamic effects associated with radiation flux variations and annealing have been modeled and incorporated into the device model. The model is implemented into the circuit simulator AIM-SPICE. Our pre-radiation model shows excellent agreement with experimental data of IRF 130 and NTE2392 VDMOS. The simulation results for the total dose and transient radiation quantitatively and predictively show the degradation of device performance.