Pixelless imaging device using optical up-converter

A pixelless imaging device based on optical wavelength conversion was designed and fabricated. The up-converter consisted of an integrated InGaAs/InP PIN photodetector and an InGaAsP/InP light-emitting diode (LED) epitaxially grown on a single InP substrate. Incoming 1.5 μm optical radiation was absorbed by the p-i-n detector and generated a photocurrent. The resultant photocurrent was used to bias the LED that emitted at 1 μm, which could be detected by conventional silicon charge coupled device. Pixelless imaging by the device has been demonstrated at room temperature.