Temperature-sensitivity analysis of 1360-nm dilute-nitride quantum-well lasers

The N-content of an InGaAsN quantum-well (QW) laser is found to dramatically affect the temperature sensitivity of the current injection efficiency (/spl eta//sub inj/) and material gain parameter (g/sub oJ/). The increased temperature sensitivity of /spl eta//sub inj/ and g/sub oJ/ of InGaAsN QW lasers with increasing N-content leads to a significant increase in their temperature sensitivity of threshold current and external differential quantum efficiency. Increasing the N-content of the InGaAsN QW potentially results in a reduction of the heavy hole confinement, which may account for the increased temperature sensitivity of the current injection efficiency.