Dopant redistribution effects in preamorphized silicon during low temperature annealing

The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.