Nucleation of tungsten by chemical vapor deposition from WF/sub 6/ and SiH/sub 4/

In this paper, we investigated the nucleation process of W from WF/sub 6/ and SiH/sub 4/ by using a cold wall-type CVD reactor. W was then deposited from WF/sub 6/(0.42vol%)/SiH/sub 4/(0.42vol%)/ H/sub 2/(33vol%)/Ar at 5 Torr. TiN substrates were heated up under Ar atmosphere and hold at 673 K for 20 min under 35 vol% H/sub 2//Ar atmosphere at 5 Torr. The surface states was monitored in-situ by using field emission scanning electron microscopy (FESEM), micro Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).