Nano-scale device modeling and simulation: FinFET

In this paper, two-dimensional quantum mechanical simulation of FinFET is reported. Current-voltage characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effect inculating the subthreshhold swing, threshold voltage rool-off, drain induced barrier lowering (DIBL). The QM simulation is compared with the classical approach in the order to understand the influenece of the electron confinement effect.