Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications

The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence with the experimental results in 10-/spl mu/m-long channel n-type SBTTs. From these results, the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60-nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10/sup 5/ at low-drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current.