A new model for including discrete dopant ions into Monte Carlo simulations

A new method for including discrete dopants into Monte Carlo device simulation is presented. The method uses a molecular dynamics treatment of the electron-electron and electron-ion interaction that includes quantum mechanical effects via an effective potential. Modeling the positive ions with an effective potential results in an energy minimum of 50.7 meV at the positive ion, which correlates well to common donor energy levels in silicon. We find that the method produces the expected mobility reduction in the I/sub D/-V/sub G/ characteristics of thin SOI MOSFETs.