Minimized constrains for lateral profiling of hot-carrier-induced oxide charge and interface traps in MOSFETs

For better understanding the hot-carrier-induced reliability problems, a charge-pumping technique has been developed to profile the Q/sub ot/ and N/sub it/ directly from the experimental results. However, the key neutralization condition is acquired by trial and error, which takes much time and effort. Therefore, a technique of two-step neutralization is proposed to find out the appropriate neutralization condition in this work. This two-step neutralization combined with the error-reduction method is shown to carry out the profiling more quickly and precisely.