Large multiplication-bandwidth products in APDs with a thin InP multiplication layer

In this paper APD is fabricated with an 80 nm InP multiplication layer. The maximum bandwidth of 21 GHz, the multiplication-bandwidth product of 170 Hz and the intrinsic avalanche build up time of 0.4 ps (390 GHz) were obtained. The results shows that an APD for next generation 40 Gbit/s system can be achieved using a conventional InP multiplication layer.