Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers

In this paper, we report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si substrate. The Ge epitaxial layers were grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system. The bandwidths reported here are the highest for Ge photodetectors on Si substrate at 1.3 /spl mu/m.