Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation

In this article, we used monoenergetic positron beams to study defects in thin HfAlO/sub x/ films deposited on Si substrates. The positrons implanted into HfAlO/sub x/ were found to annihilate from the trapped state in open spaces; the size of the open spaces was larger than that of point defects such as monovacancies or divacancies.