Characterization of p++ layer fabrication using a liquid source for MEMS applications

This paper presents the fabrication of boron etch stop layer using spin on dopants and its applications in MEMS: thin diaphragm, cantilevers fabricated by surface and bulk micromachining process. The doping profile was simulated using T-Supreme4. The stress induces in this layer was analyzed using a TENCOR stress measurement. In addition, the surface roughness was measured by AFM analysis. Diaphragms and cantilevers (fabricated using bulk and surface micromachining) were successfully processed using etch-stop techniques.