Transient analysis of Si-MOS and SiC-JFET cascode power switches

The paper is concerned with the switching behaviour of the two hybrid Si/SiC high voltage cascode configurations, using OR-CAD simulations. The drive pulse parameters effects are extensively investigated. The cascode circuit with two SiC J-FETs features an easy control via the silicon MOS transistor and the ability of fast turn-on and turn off which are essential in high voltage/high speed applications.