A 2.3 V PHEMT power SP3T antenna switch IC for GSM handsets

A high power GaAs pHEMT SP3T antenna-switch IC for GSM handsets has been developed With P1dB over 36 dBm, this switch IC features high harmonic rejection of 70 dBc at 900 MHz and 34 dBm, and at 1800 MHz and 32 dBm input power, both operating at 2.3 V and at +85C Insertion loss of 0.55 dB and 0.750, and isolation of greater than 25 dB at 900 MHz and 1800 MHz, respectively, are also achieved. The high performance attributes to the combination of pHEMT process and design techniques.