MOCVD growth of InGaAsN QWs and 1.3 /spl mu/m VCSELs

This paper demonstrates MOCVD growth of InGaAsN quantum wells and fabrication of vertical cavity surface emitting lasers (VCSELs). Results on the modulation and high temperature characteristics of 1.3 /spl mu/m-range InGaAsN vertical cavity surface emitting lasers (VCSELs) are also presented. Over 1 mW of single-mode output power is obtained at 80/spl deg/C. Clear eye opening at 2.5 Gb/s and 10 Gb/s are obtained up to 120/spl deg/C and 90/spl deg/C, respectively.