RF MOSFETs noise modeling-the wave approach

This paper presents a new procedure for noise modeling of microwave MOSFETs based on the wave approach. The procedure is based on circuit theory concepts and on similar kind of analysis we proposed earlier for MESFETs/HEMTs noise modeling. Noise wave parameters are derived in terms of three equivalent noise temperatures. Noise parameter characteristics obtained by proposed modeling procedure are compared with the measured ones for a typical RF MOSFET.