A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature

The results of our most recent activity in the implementation of robust and easy-to-perform techniques for the extraction of reliable equivalent circuits for microwave transistors is presented. Our effort also led to the development of a compact software tool written in Agilent VEE language for totally automated measurement and direct model extraction. Its effectiveness has been tested at several bias and temperature points and the modeling results have been compared with those obtained by application of other procedures. This procedure can be adopted for both Schottky-gate devices (MESFET's, HEMT's) and insulated gate devices (RF MOSFET's, CMOS) since no direct polarization of the gate is requested.