Broaden buried oxide layer of SOI structure in SIMOX using water plasma

In this paper, the BOX layer in SOI materials fabricated by the water ion implantation approach is broaden more than 50% over that made by the conventional low-dose SIMOX process. SIMS results revealed that there are two hydrogen enrichment peaks around the damaged regions induced by oxygen ion irradiation in the as-implanted samples, and the two peaks correspond to the two interfaces of the BOX in the annealed samples. The heavily damaged region with hydrogen induced defects appear to be the adsorption center for the outside oxygen to diffuse into silicon and then broaden the BOX layer during the high-temperature annealing process.