Scaled front-side and back-side trapping SONOS memories on SOI

We report results on ultra-short channel front-side trapping SONOS (silicon-oxide-nitride-oxide-silicon) memories and on a new back-side trapping memory, obtained by the creation of a complex SOI substrate. Front-side trapping SONOS memories show useful and reproducible memory characteristics down to 46 nm gate length. The back-side trapping memory device has potentially unique properties since it is both a scalable memory and a scalable SOI transistor.